MOS memory cell with exponentially-profiled doping and offset fl

Details MOS memory cell with exponentially-profiled doping and offset fl MOS memory cell with exponentially-profiled doping and offset fl

1989-02-21

1991-01-15

James, Andrew J.

357 54, 357 90, 357 91, 357 233, H01L 2978

Patent

active

049857177

ABSTRACT:
A semiconductor memory device having a CMOS memory cell with a floating gate and increasing concentration of dopant in the source, drain and channel regions. Typically the concentration profile is generally exponential across the channel width. The device has relatively high diffusion current densities accelerated toward the surface and directed toward the channel/drain interface. Gate oxidation thickness is reduced over the channel near the drain to create a tunnel "window" in the area of greatest electric field magnitude. The device provides for significantly reduced write times as compared to conventional devices.

REFERENCES:
patent: 4878101 (1989-11-01), Hsieh et al.

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