MOS Isolation processing

Details MOS Isolation processing MOS Isolation processing

1984-11-27

1985-11-12

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148DIG117, 148 15, 357 48, 357 49, 427 94, H01L 2176, H01L 2194

Patent

active

045519102

ABSTRACT:
A process for growing field oxide regions in an MOS circuit. An initial thermally grown layer of silicon nitride seals the substrate surface and reduces lateral oxidation, or bird's beak formation along the substrate-nitride interface. Field oxidation takes place in two steps, with the first step being a dry oxidation in HCL and the second taking place in steam.

REFERENCES:
patent: 3751722 (1973-08-01), Richman
patent: 3752711 (1973-08-01), Kooi et al.
patent: 3906541 (1975-09-01), Goronkin
patent: 4352236 (1982-10-01), McCollum
Hui et al, "Selective Oxidation Technologies for High Density MOS", IEEE Elec. Dev. Lett., vol. EDL-2, No. 10, Oct. 1981, pp. 244-247.
Hui et al, "Electrical Properties of MOS Devices Made with SILO Technology", IEDM, 1982, p. 220.

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