MOS inverter circuit having two different supply voltages

Details MOS inverter circuit having two different supply voltages MOS inverter circuit having two different supply voltages

1986-07-07

1988-08-30

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307270, 307581, 307264, 307475, 365226, 365104, H03K 17687, H03K 1710, H03K 19094, G11C 1140

Patent

active

047679506

ABSTRACT:
A MOS inverter circuit includes a first supply voltage source, a second supply voltage source being higher than the first supply voltage source, a control MOS FET of the enhancement type, a first load MOS FET of the depletion type connected to the control MOS FET, a parallel circuit of a second load MOS FET of the depletion type and a third MOS FET, the parallel circuit being connected in series with the first load MOS FET, the third MOS FET having a controlled path connected to the first supply voltage source, and the first and second load MOS FET's having controlled paths interconnected in series and connected to the second supply voltage source.

REFERENCES:
patent: 4069430 (1978-01-01), Masuda
patent: 4101788 (1978-07-01), Baker
patent: 4506350 (1985-03-01), Asano et al.
patent: 4555644 (1985-11-01), Devecchi et al.
patent: 4565932 (1986-01-01), Kuo et al.

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