MOS Integrated circuits with implanted resistor elements

Details MOS Integrated circuits with implanted resistor elements MOS Integrated circuits with implanted resistor elements

1976-05-28

1981-01-27

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29576C, 29578, 29577R, B01J 1700

Patent

active

042466920

ABSTRACT:
Resistor elements for MOS integrated circuits are made by an ion implant step compatable with a self-aligned N-channel silicon-gate process. The resistor elements are beneath the field oxide in the finished device, although the implant step is prior to formation of the thick oxide. Resistors of this type are ideally suited for load devices in static RAM cells.

REFERENCES:
patent: 3752711 (1973-08-01), Kooi
patent: 3889358 (1975-06-01), Bierhenke
patent: 4033026 (1977-07-01), Pashley

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