MOS image sensor

Television – Camera – system and detail – Solid-state image sensor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

348241, 250214R, 2502081, H04N 5335

Patent

active

061410500

ABSTRACT:
An image sensor circuit which employs a photodiode in conjunction with a charge transfer mechanism. By employing the photodiode, at least a portion of the light sensed does not pass through a layer of polysilicon, and so is not prevented from reaching the sensing area by the polysilicon. The image sensor circuit of the invention is made up of device structures readily available in standard CMOS process technologies Advantageously, image sensors embodying the invention show substantially improved quantum efficiency for short wavelength light over the prior art sensors. In addition, image sensors embodying the invention display improved dark current uniformity, thus improving yield.

REFERENCES:
patent: 5471515 (1995-11-01), Fossum et al.
patent: 5576763 (1996-11-01), Ackland et al.
patent: 5742047 (1998-04-01), Buhler et al.
patent: 6008486 (1999-12-01), Stam et al.
patent: 6046444 (2000-04-01), Afghahi
Mikio Kyomasu, "A New MOS Imager Using Photodiode as Current Source", IEEE Journal of Solid-State Circuits, vol. 26, No. 8, Aug. 26, 1991, p. 1116-1122.
European Search Report 98304523.8-2203.
Noise in Buried Channel Charge-Coupled Devices, Robert W. Brodersen and Stephen P. Emmons, IEEE Journal of Sold-State Circuits, vol. SC-11, No. 1, Feb. 1976, pp. 147-155.
Active Pixel Sensors: Are CCD's Dinosaurs?, Eric R. Fossum, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109 USA, pp. 1-13, Proceedings of the SPIE, vol. 1900 Charge-Coupled Devices and Solid-State Optical Sensors III (1993).
A Random Access Photodiode Array for Intelligent Image Capture, Orly Yadid-Pecht, Ran Ginosar, Member, IEEE, and Yosi Shacham Diamand, IEEE Transactions on Electron Devices, vol. 38, No. 8, Aug. 1991, pp. 1772-1778.
TP13.5: A 256X256 CMOS Active Pixel Image Sensor with Motion Detection, Alex Dickinson, Bryan Ackland, El-Sayed Eid, David Inglis, Eric R. Fossum, 1995 IEEE International Solid-State Circuits Conference, pp. 226-227.
No Image Lag Photodiode Structure in the Interline CCD Image Sensor, Nobukazu Teranishi, Akiyoshi Kohono, Yasuo Ishihara, Eiji Oda and Kouichi Arai pp. 324-327, 1982 IEEE.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

MOS image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS image sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2058328

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.