Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1996-10-03
1998-10-06
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257901, 327427, H01L 2900
Patent
active
058180990
ABSTRACT:
An RF switch comprises a switching FET having gate and back gate terminals, an input port for receiving an RF signal, and an output port for providing substantially the RF signal during an ON state of the FET. Switching circuitry connects the back gate terminal of the FET to the input port during the ON state to reduce insertion loss during the ON state, and connects the back gate terminal to a point of reference potential during an OFF state of the FET to increase isolation during the OFF state. Preferably, the switching FET is a depletion mode silicon MOSFET capable of operating with low supply voltages. The switching circuitry preferably comprises a second FET for electrically connecting the back gate terminal and the input terminal (e.g., source) of the switching FET during the ON state, and a third FET for electrically connecting the back gate terminal of the switching FET to the point of reference potential during the OFF state.
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Crane Sara W.
International Business Machines - Corporation
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