MOS half-bridge drive circuit, particularly for power MOS half-b

Details MOS half-bridge drive circuit, particularly for power MOS half-b MOS half-bridge drive circuit, particularly for power MOS half-b

1994-10-05

1996-07-30

Tran, Toan

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Current driver

327306, 327427, 327530, H03L 500, H03K 17687

Patent

active

055415407

ABSTRACT:
A drive circuit includes a voltage source supplying a reference voltage at its output; a voltage elevating circuit connected to a supply voltage and to the output of the voltage source, and supplying at its output, under normal operating conditions, a drive voltage greater than the supply voltage and increasing with the reference voltage. The input of the voltage source is connected to the output of the voltage elevating circuit, and defines a positive feedback path resulting in an increase in the reference voltage corresponding to an increase in the drive voltage, and therefore results in a corresponding increase in the drive voltage up to a maximum permissible value, thus providing for a sufficient drive voltage for driving the gate-source junction of power MOS transistors, even in the presence of a low supply voltage.

REFERENCES:
patent: 4896297 (1990-01-01), Miyatake et al.
patent: 4906056 (1990-03-01), Tamiguchi
patent: 4980576 (1990-12-01), Rossi et al.
patent: 5258662 (1993-11-01), Skovmand
patent: 5267201 (1993-11-01), Foss et al.
patent: 5268871 (1993-12-01), Dhong et al.
Seimens Components, vol. 21, No. 2, Apr. 1986, Berlin, DE, pp. 66-88, Brad Hall, "P-Channel Functions with N-Channel Fets".
Electronic Engineering, vol. 61, No. 745, Jan. 1989, London, UK, Brian Taylor et al., "The IR8200 Monolithic DMOS H-Bridge Power Control IC", pp. 43-44, 47-48.

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