Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1992-04-29
1994-05-31
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257139, 257147, H01L 29100, H01L 29600, H01L 29740
Patent
active
053171713
ABSTRACT:
An emitter-switched thyristor structure includes a remote turn-off electrode for reducing turn-off time and increasing maximum controllable operating current. The switched thyristor structure further includes anode and cathode electrodes, with the remote electrode being connected to the cathode electrode. A multi-layer body of semiconductor material has a first surface, as well as regenerative and non-regenerative portions each operatively coupled between the anode and cathode electrodes. The regenerative portion includes adjacent first, second, third and fourth regions of alternating conductivity type arranged respectively in series. Electrical contacts exist between the remote electrode and the second region, as well as between the anode electrode and the fourth region. The thyristor is turned on by applying an enabling voltage to an insulated gate electrode disposed adjacent the first surface such that a conductive channel is created in the regenerative portion via modulation of the conductivity therein. Similarly, the termination of regenerative operation is initiated by applying a non-enabling voltage to the gate electrode. The remote electrode collects any charges remaining in the second region of the regenerative portion subsequent to application of the non-enabling voltage and thereby expedites turn off of the emitter-switched thyristor.
REFERENCES:
patent: 4132996 (1979-01-01), Baliga
patent: 4165517 (1979-08-01), Temple et al.
patent: 4466173 (1984-08-01), Baliga
patent: 4569118 (1986-02-01), Baliga
patent: 4571815 (1986-02-01), Baliga
patent: 4587712 (1986-05-01), Baliga
patent: 4663547 (1987-05-01), Baliga et al.
patent: 4799095 (1989-01-01), Baliga
patent: 4827321 (1989-05-01), Baliga
patent: 4847671 (1989-07-01), Pattanayak et al.
patent: 4920062 (1990-04-01), Tsunoda
patent: 4937644 (1990-06-01), Baliga
patent: 4942445 (1990-07-01), Baliga et al.
patent: 4963950 (1990-10-01), Chang et al.
patent: 4969027 (1990-11-01), Baliga et al.
patent: 4982258 (1991-01-01), Baliga
patent: 4990975 (1991-02-01), Hagino
patent: 5032881 (1991-07-01), Sardo et al.
"MOS Controlled Thyristors (MCT'S)"; V. A. K. Temple; 1984 IEDM; General Electric Company, Corporate Research & Dev. Ctr; pp. 282-285.
"The Insulated Gate Transistor: A New Three-Terminal MOS-Controlled Bipolar Power Device"; B. Jayant Baliga et al.; IEEE Transactions on Electron Devices; vol. ED-31, No. 6, Jun. 1984; pp. 821-828.
"The MOS-Gated Emitter Switched Thyristor"; B. Jayant Baliga; IEEE Electron Devices Letters, vol. 11, No. 2, Feb. 1990; pp. 75-77.
"Modern Power Devices"; B. Jayant Baliga; A Wiley-Interscience Publication; John Wiley & Sons; pp. 344-354; 401-404; 367-376.
Baliga Bantval J.
Shekar Mallikarjunaswamy S.
Hardy David B.
Hille Rolf
North Carolina State University
LandOfFree
MOS gated thyristor with remote turn-off electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOS gated thyristor with remote turn-off electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS gated thyristor with remote turn-off electrode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1629464