MOS-gated thyristor

Details MOS-gated thyristor MOS-gated thyristor

1992-06-03

1993-04-13

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257110, 257155, 257175, H01L 2974, H01L 29747, H01L 2910, H01L 2702

Patent

active

052027503

ABSTRACT:
A semiconductor device includes a thyristor (4,5,8,9) in which connection is made to the cathode region (9) of the thyristor by means of an MOS structure. The MOS structure is provided by a fifth region (11) forming a pn junction with the cathode region (9), a sixth region (13) in contact with the cathode electrode (C) and forming a pn junction (14) with the fifth region (11), and an insulated gate (15) overlying a conduction channel area (110) of the fifth region (11) for defining a gateable conductive path for charge carriers into the cathode region (9) to initiate thyristor action. The conductive path is thus controlled by the voltage applied to the insulated gate (15), enabling the flow of charge carriers to the cathode region (9) to be stemmed by application of an appropriate gate voltage oxide. The fifth region (11) is electrically connected to provide a path for extraction of charge carriers during turn-off of the thyristor, thereby improving the controllable current capability of the thyristor.

REFERENCES:
patent: 4717940 (1988-01-01), Shinohe et al.
patent: 5034785 (1991-07-01), Blanchard
"Evolution of Mos-Bipolar Power Semiconductor Technology" Baliga; pp. 409-418; IEEE Proceedings vol. 76 No. 4, Apr. 1988.

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