MOS gated semiconductor device with source metal covering the ac

Details MOS gated semiconductor device with source metal covering the ac MOS gated semiconductor device with source metal covering the ac

1997-02-20

1998-09-01

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

257660, 257493, 257655, H01L 23552, H01L 2358, H01L 29167

Patent

active

058014314

ABSTRACT:
An MOS gated semiconductor device includes a metal source contact electrode which extends across the top of a overlaying oxide layer that is formed atop the gate electrode. The source metal thus extends over the channel region to provide a physical metal shield against the migration of ionic contaminants that may be present in the plastic device housing, particularly during high temperature operation. The metal shield substantially improves the device characteristics under high temperature bias conditions.

REFERENCES:
patent: 3518494 (1970-06-01), James
patent: 4399449 (1983-08-01), Herman et al.

Affiliated with

Also associated with

Rating

MOS gated semiconductor device with source metal covering the ac does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS gated semiconductor device with source metal covering the ac, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS gated semiconductor device with source metal covering the ac will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-272241