MOS-gated power semiconductor devices with conductivity modulati

Details MOS-gated power semiconductor devices with conductivity modulati MOS-gated power semiconductor devices with conductivity modulati

1995-06-16

1997-04-22

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Conductivity modulation device

257273, 257335, 257341, 257342, 257401, H01L 2358

Patent

active

056231512

ABSTRACT:
A MOS-gated power semiconductor device which combines bipolar conduction with MOS-gate control to achieve low on-state voltage drop while having fast-switching characteristics. A floating P injector region located at the upper surface of the device injects holes, and a grounded P collector region, also located at the upper surface of the device, collects the injected holes. A driver DMOSFET integrated in the structure couples the P injector region to the drain potential during the on-state of the device. The P collector region is configured in such that the driver DMOSFET is conductivity modulated by a positive feedback mechanism, thereby drastically reducing the on-resistance of the device at high current levels.

REFERENCES:
patent: 5357120 (1994-10-01), Mori
J.S. Ajit et al., "Comparison of MOS-Gated Bipolar Transistor Structures", EPE-MADEP Symposium on Materials and Devices for Power Electronics-MADEP Proceedings, 2-6 Sep., 1991.

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