MOS gate structure semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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Details

257751, 257763, 257767, 257770, 438631, H01L 2348, H01L 2940

Patent

active

060181958

ABSTRACT:
A high-speed and highly-integrated semiconductor device and a producing method thereof, which can reduce resistance between a gate electrode and a wiring layer on the gate electrode and can make an element minute, are provided. The gate electrodes on a semiconductor substrate, diffusion layers formed in a surface region of the semiconductor substrate, buried electrodes formed on the semiconductor substrate so as to be connected to the diffusion layers respectively, an interlayer insulating film buried in spaces between the gate electrodes and in spaces between the gate electrodes and the buried electrodes, and wiring layers formed so as to be connected to the gate electrodes or to the buried electrodes are provided. A height of surfaces of the gate electrodes, a height of surfaces of the buried electrodes and a height of a surface of the interlayer insulating film are equal, and the surfaces of the gate electrodes, the buried electrodes and the interlayer insulating film form a plane. The wiring layers formed on the plane so as to be directly connected to the surfaces of the gate electrodes and the buried electrodes.

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patent: 5907787 (1999-05-01), Sato

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