MOS gate controlled thyristor having improved turn on/turn off c

Details MOS gate controlled thyristor having improved turn on/turn off c MOS gate controlled thyristor having improved turn on/turn off c

1992-10-30

1994-08-09

Van Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257130, 257132, 257152, 257153, 257163, 257167, 257336, H01L 2974, H01L 2910, H01L 2978

Patent

active

053369076

ABSTRACT:
A gate electrode includes a first region formed in an OFF gate region and a second region formed in an ON gate region. A P-channel region is formed in the OFF gate region and an N-channel region is formed in the ON gate region to separate these gate regions. Since a P.sup.- -type channel region of low impurity concentration is formed at an end of a P-type base region in which the N-channel region is formed, the impurity concentration of the P-type base region can be increased and thus turn-off characteristic is improved.

REFERENCES:
patent: 5155569 (1992-10-01), Ternshima
ISPSD '91, pp. 138-141, M. Nandakumar, et al., "The Base Resistance Controlled Thyristor (NRT), A New MOS Gated Power Thyristor".
Patent Abstracts of Japan, vol. 12, No. 273 (E-693)(3120), Jul. 29, 1988, & JP-A-63 053 972, Mar. 8, 1988.
IEEE Electron Device Letters, vol. 11, No. 6, Jun. 1990, pp. 256-257, M. W. Darwish, "A New Lateral MOS-Controlled Thyristor".
IEEE Transactions of Electron Devices, vol. ED-27, No. 2, Feb. 1980, pp. 380-387 J. D. Plummer, et al., "Insulated-Gate Planar Thyristors: I-Structure and Basic Operations".
Patent Abstracts of Japan, vol. 13, No. 150 (E-742)(3498), Apr. 12, 1989, & JP-A-63 310 171, Dec. 19, 1988.

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