Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1993-10-08
1996-08-06
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257143, 257163, 257139, 257147, H01L 2974, H01L 31111
Patent
active
055436390
ABSTRACT:
On one major surface of an n.sup.- -type semiconductor substrate, a p-type base region is formed in a semiconductor substrate, and an n-type emitter region is formed in the p-type base region. A p-type source region is formed near the p-type base region. A cathode electrode has a so-called shorted emitter structure in which the cathode electrode is connected to the p-type source region, the p-type base region, and the n-type emitter region. The p-type source region preferably has a pattern adjacent the p-type base region. The p-type base region is preferably constituted by a plurality of diffusion layers which are electrically connected to each other. Therefore, turn-off characteristics of a device can be improved, and turn-on characteristics are improved without degrading the turn-off characteristics, thereby improving trade-off between the turn-on characteristics and the turn-off characteristics.
REFERENCES:
patent: 4809045 (1989-02-01), Yilmaz
patent: 4810665 (1989-03-01), Chang et al.
patent: 5336907 (1994-08-01), Nakanishi et al.
Proceedings of the Third International Symposium on Power Semiconductor Devices & ICs, 1991, pp. 138-141, M. Nandakumar, et al., "The Base Resistance Controlled Thyristor (BRT) . . . ".
Nakanishi Hidetoshi
Usui Yasunori
Yakushiji Shigenori
Kabushiki Kaisha Toshiba
Loke Steven H.
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