MOS fuse with programmable tunnel oxide breakdown

Details MOS fuse with programmable tunnel oxide breakdown MOS fuse with programmable tunnel oxide breakdown

1990-12-07

1993-11-02

LaRoche, Eugene R.

Static information storage and retrieval

Read only systems

Fusible

365182, 365218, 3652257, G11C 1700, G11C 700

Patent

active

052589471

ABSTRACT:
A MOS fuse with programmable tunnel oxide breakdown is made up of a tunnel oxide EEPROM cell, which can be programmed/erased by a programming/erasure voltage having a slow-rising edge, while the tunnel oxide can be subjected to breakdown, when desired, by switching over to a programming/erasure voltage having a steep edge. Such fuse can be used in all MOS integrated circuits and particularly in memory card type applications.

REFERENCES:
patent: 3576549 (1971-04-01), Hess
patent: 3668655 (1972-06-01), Allen
patent: 4507757 (1985-03-01), McElroy
patent: 4903111 (1990-02-01), Takemae et al.
patent: 4932053 (1990-06-01), Fruhauf et al.
patent: 4935645 (1990-06-01), Lee
Kendall W. Pope, "No Waiting--EEPROM at Work", 1983, Computer Design, pp. 191-196, vol. 22, No. 7.

Affiliated with

Also associated with

Rating

MOS fuse with programmable tunnel oxide breakdown does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS fuse with programmable tunnel oxide breakdown, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS fuse with programmable tunnel oxide breakdown will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1762834