Static information storage and retrieval – Read only systems – Fusible
Patent
1990-07-11
1994-03-01
Dixon, Joseph L.
Static information storage and retrieval
Read only systems
Fusible
365104, 365185, 257529, 257922, G11C 1700, H01L 2702, H01L 27115
Patent
active
052914348
ABSTRACT:
A MOS fuse with oxide breakdown based on a MOS cell electrically programmable by tunnel effect and storage of charges at a gate. This cell is converted into a fuse by providing for the application, when the fuse has to break down, of an intense field, greater than the oxide breakdown threshold, in the tunnel window. Thus, the breakdown is irreversible. The disclosed device can be applied notably to fuses designed for the integrated circuits of memory cards.
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Sato et al., "A New Programmable Cell Utilizing Insulator Breakdown", International Electron Devices Meeting, Wash., D.C., U.S., Dec. 1985, pp. 639-642.
Bhattacharyya et al., "Hard Coupled Sandwiched High Density Floating Gate Cell", IBM Technical Disclosure Bulletin, vol. 23, No. 2, Jul., 1980, pp. 543-545.
Dixon Joseph L.
Gemplus Card International
Plottel Roland
Whitfield Michael A.
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