MOS field-effect transistor structure with mesa-like contact and

Details MOS field-effect transistor structure with mesa-like contact and MOS field-effect transistor structure with mesa-like contact and

1976-01-30

1977-05-10

Larkins, William D.

Metal treatment

Stock

Ferrous

148 15, 357 41, 357 50, 357 52, 357 54, H01L 2978

Patent

active

040231950

ABSTRACT:
An MOS field effect transistor includes a substrate in which source and drain regions are formed. A thick silicon dioxide layer is selectively formed on the upper surface of the substrate, so that in the resulting structure, the junction depth associated with the source and drain regions is selectively greater at contact locations and at the portions of the source and drain regions that are in contact with the active channel.

REFERENCES:
patent: 3751722 (1973-08-01), Richman
patent: 3755001 (1973-08-01), Kooi et al.
patent: 3832248 (1974-08-01), Bazin et al.
patent: 3873383 (1975-03-01), Kooi
Appels et al., "Local Oxidation of Silicon," Philips Research Reports, vol. 25, 1970, pp. 126-129.

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