MOS FET having a thin film SOI structure

Details MOS FET having a thin film SOI structure MOS FET having a thin film SOI structure

1993-02-24

1994-05-03

Sikes, William L.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 62, 257213, 257 57, H01L 2904, H01L 2976

Patent

active

053089995

ABSTRACT:
The breakdown voltage of an MIS field effect transistor having an SOI structure is improved by forming a gate electrode on the top surface and two side surfaces of a channel region of the SOI layer and by partially extending the gate electrode toward the inside under the bottom of the channel region such the gate electrode is not completly connected.

REFERENCES:
patent: 4996574 (1991-02-01), Shirasaki
patent: 5120666 (1992-06-01), Gotou

Affiliated with

Also associated with

Rating

MOS FET having a thin film SOI structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS FET having a thin film SOI structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS FET having a thin film SOI structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2116256