MOS fabrication process, including deposition of a boron-doped d

Details MOS fabrication process, including deposition of a boron-doped d MOS fabrication process, including deposition of a boron-doped d

1993-02-23

1994-01-25

Kunemund, Robert

Fishing, trapping, and vermin destroying

437141, 437162, 437950, 148DIG59, H01L 2120

Patent

active

052815528

ABSTRACT:
A method is described for making at least one MOS transistor on a silicon substrate. According to this method, a layer of a silicon dioxide material is formed on a principal surface of the substrate. The oxide layer is then patterned such that at least one source region and at least one drain region of the substrate are exposed. A layer of boron-doped germanium is then deposited on the exposed regions by RTCVD. The substrate is then heated such that boron diffuses from the germanium layer into the source and drain regions. The substrate principal surface can then be etched such that the germanium layer is removed with high selectivity.

REFERENCES:
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Ozturk et al. "Rapid Thermal Chemical Vapor Deposition of Germanium on Silicon and Silicon Dioxide and New Applications of Ge in ULSI Technologies", Jr. of Electronic Materials 19(1990), 1129-1134.
S. K. Ghandhi "VLSI Fabrication Principles", John Wiley & Sons, New York (1982), pp. 233-234.
Ashburn et al. "Formation of Ti and Co Germanides on Si(100) Using Rapid Thermal Processing" Jr. Elec. Materials 21(1992) pp. 81-86.
Ishii et al. "Selective Ge deposition on Si using thermal decomposition of GeH.sub.4 " Appl. Phys. Letts. 47 (1985) 863-865.
D. T. Grider et al., "Ultra-Shallow Junction Formation by Diffusion from Polycrystalline Si.sub.x Ge.sub.1-x Alloys," 1991 Electron. Mater. Conf., Boulder, Colo.
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Kunihiro Suzuki et al., "Constant Boron Concentration Diffusion Source of Ion-Implanted Polycrystalline Silicon for Forming Shallow Junctions in Silicon," J. Electrochem. Soc. 138, 1991, pp. 2201-2205.
M. Miyake, "Diffusion of Boron into Silicon from Borosilicate Glass Using Rapid Thermal Processing," J. Electrochem. Soc. 138, 1991, pp. 3031-3039.

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