Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-07-12
2009-08-11
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S534000, C365S096000
Reexamination Certificate
active
07573118
ABSTRACT:
A programming method of a MOS electric fuse including preparing, as a fuse element, a MOS transistor which has a first impurity region and a second impurity region, both of a second conductivity type, formed to face with each other on an upper surface of a well of a first conductivity type on a semiconductor substrate, a gate dielectric film formed on the upper surface of the well at least between the first impurity region and the second impurity region, and a gate electrode formed through the gate dielectric film on the upper surface of the well held between the first impurity region and the second impurity region, and applying a first voltage to the gate electrode, and a second voltage different from the first voltage to the first impurity region, and short-circuiting the gate dielectric film only between the gate electrode and the first impurity region.
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Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Wojciechowicz Edward
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