MOS double polysilicon read-only memory and cell

Details MOS double polysilicon read-only memory and cell MOS double polysilicon read-only memory and cell

1978-05-19

1979-12-25

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 23, 357 45, 357 59, 365104, 29571, 29578, 29580, H01L 2704

Patent

active

041808266

ABSTRACT:
A high density, read-only, mask programmed memory and memory cell fabricated with two layers of polycrystalline silicon (polysilicon) is disclosed. Elongated doped substrate regions form source/drain regions for the cells and are used as bit lines for the memory. The first layer of polysilicon defines gates for the cells; the second layer of polysilicon defines transverse work lines. Programming consists of selective contacts between the first and second layers of polysilicon over the active regions of the cells. A cell area of approximately 0.125 mils.sup.2 is realized.

REFERENCES:
patent: 4012757 (1977-03-01), Koo
patent: 4016587 (1977-04-01), De La Moneda
patent: 4075045 (1978-02-01), Rideout
patent: 4095251 (1978-06-01), Dennard et al.
patent: 4142926 (1979-03-01), Morgan

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