MOS dosimeter

Details MOS dosimeter MOS dosimeter

1985-03-29

1988-11-29

Sikes, William L.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

25037007, 557 231, 557 52, 557 54, H01L 2714, G01T 124, G01T 122

Patent

active

047885815

ABSTRACT:
In known MOS dosimeters for measuring an energy dosage within radiation fields, which comprise a semiconductor substrate with an insulator layer and a metal contact or poly-si-contact, a measurement is taken and irreversible damage is done to the insulator layer. Prior art dosimeters of this kind cannot be electrically reset, nor can such MOS structures be directly integrated with evaluating electronics. The present invention avoids these drawbacks by providing a hard-radiation resistant insulator layer with a floating gate X. Such a resistant insulator layer is produced in a "hardened" process by thermal dry oxidation of silicon at low temperatures of about 850.degree. to 950.degree. C. The inventive dosimeter makes it possible to integrate, on the floating gate, both negative and positive charges. This permits an integration of MOS sensors and signal processing electronic elements on a single chip. By providing a concentrator, the sensitivity of the inventive MOS dosimeter can be augmented by several orders of magnitude, as compared to conventional devices.

REFERENCES:
patent: 3569704 (1971-03-01), Mitchell
patent: 3999209 (1976-12-01), Wrigley et al.
patent: 4200841 (1980-04-01), Nagata et al.
patent: 4213045 (1980-07-01), Fraass et al.
Ciarla, "MOSFET Detector Evaluation", IEEE Trans. Nuc. Sci., vol. 21, No. 1, Feb. 1974, pp. 390-394.

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