MOS device for long-term learning

Details MOS device for long-term learning MOS device for long-term learning

1989-06-09

1990-09-04

Hille, Rolf

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 43, 357 42, 365185, H01L 2978, H01L 2702, G11C 1134

Patent

active

049539280

ABSTRACT:
A semiconductor structure for long-term learning includes a p-type silicon substrate or well having first and second spaced apart n-type regions formed therein. A polysilicon floating gate is separated from the surface of the silicon substrate by a layer of gate oxide. One edge of the polysilicon floating gate is aligned with the edge of the first n-type region such that the polysilicon floating gate does not appreciably overly the n-type region. The second n-type region lies beyond the edge of the polysilicon floating gate. The first n-type region, the silicon substrate, and the second n-type region form the collector, base, and emitter, respectively, of a lateral bipolar transistor.
An alternate embodiment of a semiconductor long-term learning structure includes an n-type silicon substrate having a p-well region formed therein. An n-type region is formed within the well region. A polysilicon floating gate is separated from the surface of the silicon substrate by a gate oxide and is positioned above the well region. One edge of the polysilicon floating gate is aligned with the edge of the n-type region within the well region such that the polysilicon floating gate does not appreciably overly the n-type region. The substrate, the well, and the n-type region, respectively, form the emitter, base, and collector of a bipolar transistor.

REFERENCES:
patent: 4375087 (1983-02-01), Wanlass
patent: 4432075 (1984-02-01), Eitan
patent: 4672409 (1987-06-01), Takei et al.
J. P. Verwey, "Nonavalanche Injection of Hot Carriers into SiO.sub.2 ", J. Appl. Phys., vol. 44, No. 6, 6/73, pp. 2681-2687.
C. A. Boesselaar, "Charge Injection Into SiO.sub.2 from Reverse Biased Junction", Solid State Electronics, 1973, vol. 16, pp. 648-651.

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