MOS-controlled thyristor with non-planar geometry

Details MOS-controlled thyristor with non-planar geometry MOS-controlled thyristor with non-planar geometry

1993-07-26

1995-05-02

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257132, 257137, 257175, 257368, H01L 2974, H01L 2702

Patent

active

054122279

ABSTRACT:
A non-planar MOS-controlled thyristor (MCT) which improved turn-off capabilities. The unique non-planar geometry brings the MOS channel region closer to the active thyristor junction, thereby reducing an "effective" resistance which inhibits turn-off of prior art devices 10. This effective resistance is a combination of the resistance through the MOS and the parasitic resistance between the MOS and active thyristor junction. For efficient thyristor turn-off at high current, the effective resistance should be about 0.6 v or less. Both the recessed gate 30 and the MCT with built-up cathode 60 have effective resistances of about 0.6 v or less.

REFERENCES:
patent: 4914496 (1990-04-01), Nakagawa et al.
patent: 5202750 (1993-04-01), Gough
Temple et al., "Inside of the MCT," PCIM Europe (Jan./Feb. 1993) pp. 25-26.

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