Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1996-08-05
1999-01-05
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257107, 257110, 257138, 257140, 257144, 257146, 257147, 257152, H01L 2974
Patent
active
058566830
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
The invention relates to a MOS-gate switchable power semiconductor component with a semiconductor body, having a plurality of unit cells, arranged side-by-side and switched parallel, which form a thyristor, and which comprise a p-emitter zone adjacent to the anode, an adjoining weakly doped n-base zone, followed by a connecting p-base zone that is joined by a n-emitter zone, into which pairs of p+-zones are embedded and which, together with the n-zone between them and an insulating gate arranged above, form a lateral first p-channel MOSFET, wherein on the one hand the drain area on the edge of the emitter zone is connected to the external cathode, which has no contact with the n-emitter zone, and on the other hand, the inside source area has a floating contact which makes simultaneous contact with the n-emitter zone, and wherein a second p-channel MOSFET is formed from the p+-zone that makes contact with the external diode, the surface area of the p-base zone and the intervening n-emitter zone, together with an insulating gate.
Such a power semiconductor component is known from DE 41 26 491. With this power semiconductor component, a p-channel MOSFET is integrated into the n-emitter zone of the thyristor, which channel is formed by two embedded p+-zones as source and drain area, as well as the MOS gate arranged above the n-conducting intervening region. The drain p+-zone at the edge of the n-emitter zone is connected to the cathode as contact electrode. The source p+-zone and the adjacent section of the emitter zone are equipped with a floating metal contact, which has an ohmic connection to the thyristor and the MOSFET, so that they are connected in series. A second p-channel MOSFET M2 is formed by the p-base of the thyristor, which extends to the surface, the p+-zone at the edge of the n-emitter zone, which makes contact with the cathode, as well as the n-emitter zone segment located in between, with the above-arranged insulating gate G2.
In order to shut down the component, the MOSFET M1, which is connected in series with the thyristor, is turned off while the MOSFET M2 is switched on simultaenously, thereby creating a secondary path from the p-base of the thyristor to the cathode. For this, the gates of the two MOSFET channels must be triggered with different gate signals. In order to achieve good shutdown behavior and a large, secure operating area (SOA) during the shutdown, both gate signals must be synchronized precisely as to time and absolute values. Interferences in the correlation of gate signals will reduce the operating area, and the component can easily be destroyed. Because a considerably more involved driver electronics is necessary, the shut-down via two gates with various control signals that must be synchronized, represents a great practical disadvantage as compared to other components, such as the IGBT. Another disadvantage is that the component does not have a characteristic with current saturation, meaning that the current does not tend toward a saturation value with increasing voltage. Thus, in case of a load short-circuit, the current is not limited by the component itself, so that fuses must be connected in series to prevent a destruction in case of a short circuit. This also applies if one of the gate connections and the cathode connection are linked on the outside. As a result of the inside resistance of the gate cathode circuit, caused among other things by the semi-insulated polycrystalline gate, the gate will not remain on the cathode potential in case of a rapid current and voltage rise. In other words, the component is not short-circuit proof.
In order to ignite the thyristor, a third and externally triggered MOSFET is integrated for the switching on of the component known from DE 41 26 491 A1. This MOSFET, which is designed as n-channel MOSFET of the enhancement type (normally-off) combines the n-emitter zone with the n-base of the thyristor when it is switched on. To switch on the component, the first and the third MOSFET are switched on and th
REFERENCES:
patent: 4811072 (1989-03-01), Risberg
patent: 5345095 (1994-09-01), Niwayama
patent: 5625203 (1997-04-01), Lilja
Shekar et al.: "Characteristics of the Emitter-Switched Thyristor". In : IEEE Transactions on Electron Devices, vol. 38, No. 7, Jul. 1991, pp. 1619-1623.
Abraham Fetsum
Daimler-Benz Aktiengesellschaft
Kunitz Norman N.
Spencer George H.
Thomas Tom
LandOfFree
MOS-controlled thyristor using a source cathode elecrode as the does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOS-controlled thyristor using a source cathode elecrode as the , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS-controlled thyristor using a source cathode elecrode as the will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-865119