Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1993-03-25
1994-06-28
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257138, 257139, 257330, H01L 2974
Patent
active
053249666
ABSTRACT:
The present invention has for its object to provide a planar MOS-controlled thyristor of improved main thyristor turn-ON characteristics and a vertical MOS-controlled thyristor of improved main thyristor turn-ON characteristics and increased integration density. In the planar MOS-controlled thyristor a p-channel MOSFET for turning OFF the main thyristor and an n-channel MOSFET for turning it ON are provided in an integrated form and a channel is provided between the cathode region and a high resistance layer. The current in the channel can be controlled by the base or gate potential through utilization of the J-FET or static induction effect. In the vertical MOS-controlled thyristor a vertical p-channel MOSFET for turning OFF the main thyristor and a vertical n-channel MOSFET for turning it ON are provided in an integrated form and a base layer or channel is provided between the cathode region and a high resistivity layer. The current in the base or channel can be controlled by the base or gate potential through utilization of the base resistance effect, J-FET effect, or static induction effect.
REFERENCES:
patent: 5034785 (1991-07-01), Blanchard
Bauer et al Current-Handling and Switching Performance of MOS-Controlled Thyristor (MCT) Structures Electron Device Letters vol. 12, No. 6, Jun. 1991.
Ronsisvalle High Power MOS-Controlled Thyristor Using the Parallel Contacting Technology for Devices on the Same Wafer EOE Firenze, 1991.
Muraoka Kimihiro
Tamamushi Takashige
Crane Sara W.
Takashige Tamamushi
Toyo Denki Seizo Kabushiki Kaisha
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