Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1992-09-21
1994-06-21
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257262, 257265, 257272, 257264, 257498, 307630, H01L 2972, H01L 2976
Patent
active
053230280
ABSTRACT:
In a MOS controlled power device, or MOS composite a static induction thyristor, an static induction thyristor (SI thyristor) unit, a MOS transistor connected in cascode relation to the SI thyristor unit and a voltage regulation element are merged onto the single monolithic chip. The SI thyristor unit has a cathode region of first conductivity type having high impurity concentration, an anode and a gate regions of second conductivity type having high impurity concentration, and a channel region of first conductivity type having low impurity concentration. The MOS transistor has a drain region which is the same region as the cathode region, a well or a base of second conductivity type formed adjacent to the channel region of the SI thyristor unit, and a source region of first conductivity type having high impurity concentration. The source region is formed within the well or above the base. The voltage regulation element comprises a first semiconductor region of second conductivity type, and a second semiconductor region of first conductivity type, both having high impurity concentration.
REFERENCES:
patent: 4985738 (1991-01-01), Nishizawa et al.
"A New Bidirectional Solid-State Switch for Telephone Loop Plant Applications", Proceedings of the IEEE vol. 69, No. 3, Mar. 1981, pp. 292-299, Peter W. Shackle et al.
"Properties of a High-Power Field-Controlled Thyristor", International Electron Devices Meeting, 1986 Technical Digest, Dec. 1986, Los Angeles, Calif., pp. 110-113.
Nishizawa Jun-ichi
Suzuki Sohbe
Jackson Jerome
Zaidan Hojin Handotai Kenkyu Shinkokai
LandOfFree
MOS composite static induction thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOS composite static induction thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS composite static induction thyristor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2222461