MOS component with a particular source and base structure

Details MOS component with a particular source and base structure MOS component with a particular source and base structure

1994-05-10

1995-03-07

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257329, 257140, H01L 2978, H01L 29784

Patent

active

053960882

ABSTRACT:
The source zone of an MOS component on a semiconductor body is disposed on the upper side of the gate electrode, and is in contact at an upper side of the source zone, with a source electrode. The base zone laterally adjoins the source zone and laterally adjoins the gate electrode at the drain zone. The minority charge carriers which flow from the semiconductor body to the cathode therefore flow directly to the source electrode through that part of the base zone disposed next to the gate electrode. An activation of a parasitic bipolar transistor, and thus the occurrence of so-called second breakdown, are thus avoided.

REFERENCES:
patent: 5034785 (1991-07-01), Blanchard
"Latch-Back-Free Self-Aligned Power MOSFET Structure with Silicided Source and Body Contact," Koh et al IEEE Electron Device Letters, vol. 9, No. 8, Aug. 1988 (pp. 408-410).

Affiliated with

Also associated with

Rating

MOS component with a particular source and base structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS component with a particular source and base structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS component with a particular source and base structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1408105