MOS-cascoded bipolar current sources in non-epitaxial structure

Details MOS-cascoded bipolar current sources in non-epitaxial structure MOS-cascoded bipolar current sources in non-epitaxial structure

1984-02-17

1990-01-02

Larkins, William D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307304, 3072961, 323312, 357 43, 341159, H03K 320, H03K 3353, G05F 304

Patent

active

048915335

ABSTRACT:
A 16-bit D/A converter formed on a single monolithic chip and having two cascaded stages each including a 256-R resistor string DAC. The analog output voltage of the first stage is coupled to the second stage by two buffer amplifiers each formed by a non-epitaxial process using a P-type substrate. The amplifiers include NMOS and PMOS-cascoded bipolar current sources arranged to avoid the use of metallization to provide for electrical interconnections within the source.

REFERENCES:
patent: 3601628 (1971-08-01), Redwine
patent: 3609479 (1971-09-01), Lin
patent: 3622812 (1971-11-01), Crawford
patent: 3639787 (1972-02-01), Lee
patent: 3997892 (1976-12-01), Sussett
patent: 4678936 (1987-07-01), Holloway
Wyland, IBM Technical Disclosure Bulletin, vol. 13, No. 1, Jun. 1970, pp. 204-205.

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