Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
257296, 257300, H01L 2900
A MOS capacitor has a p-type silicon substrate, an n-type impurity diffusion area formed by implanting an impurity into a region of the silicon substrate, a silicon oxide layer formed on the diffusion area, and a polysilicon electrode formed on the silicon oxide layer. An impurity profile is formed in the region such that the concentration of the impurity increases from a surface common to the diffusion area and the silicon oxide layer towards the inside of the silicon substrate. The concentration of the impurity at the interface is less than or equal to 1.times.10.sup.20 cm.sup.-3, and a peak concentration lies at a depth of more than 0.05 .mu.m under the interface. This controls accelerated oxidization during the thermal oxidization and also controls the dependence of the capacitance on the voltage.
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Matsushita Electronics Corporation
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