Patent
1987-04-10
1989-01-17
Clawson, Jr., Joseph E.
357 20, 357 233, 357 42, 357 48, H01L 2702
Patent
active
047990988
ABSTRACT:
In a semiconductor device of the type in which a bipolar element and MOS field-effect transistors are formed on one surface of a semiconductor substrate, this invention discloses a semiconductor device characterized in that first buried layers of a first conductivity type are formed within regions of the semiconductor substrate in which the bipolar element are formed, a second buried layer of the first conductivity and at least one MOS field-effect transistor type is formed within the semiconductor substrate facing at least the emitter of the bipolar element, and the depth from one surface of the semiconductor substrate to the second buried layer of the first conductivity type is less than the depth from that surface to the first buried layer of the first conductivity type.
This invention can prevent any increase in the capacity of the MOS field-effect transistor, and can also improve the operating speed of the bipolar element.
REFERENCES:
patent: 3885998 (1975-05-01), Reinol
patent: 3961340 (1976-06-01), Encinas
patent: 4242691 (1980-12-01), Kotani et al.
patent: 4458158 (1984-07-01), Mayrano
patent: 4532003 (1985-07-01), Beasom
W. Chin et al., "Integ. CKT . . . Devices," IBM Tech. Discl. Bull. vol. 16 #6, Nov. 1973, pp. 1985/1986.
Ikeda Takahide
Mukai Touji
Odaka Masanori
Ogiue Katsumi
Watanabe Atsuo
Clawson Jr. Joseph E.
Hitachi , Ltd.
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