Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2008-05-19
2010-02-02
Peng, Charlie (Department: 2883)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C257SE21248, C257SE21286
Reexamination Certificate
active
07655489
ABSTRACT:
Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.
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Hall Douglas
Huang Mingjun
Ladas & Parry LLP
Peng Charlie
The University of Notre Dame Du Lac
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