Patent
1985-12-27
1988-05-31
Sikes, William L.
350 9615, 350 9619, G02B 610
Patent
active
047476494
ABSTRACT:
A monolithically integrated WDM demultiplex module has a film wave guide of InGaAsP fashioned on a substrate, a photodiode of InGaAs being applied to the film wave guide. The photodiode is optically coupled to the film wave guide by a leakage coupling. A wavelength selection element in the form of a grating is provided in the surface of the film wave guide. The module can be manufactured with a single epitaxial step. Structures for increasing the crosstalk attenuation of the module and for a better coupling-in of radiation into the module are provided.
REFERENCES:
patent: 3978426 (1976-08-01), Logan et al.
patent: 4136928 (1979-01-01), Logan et al.
patent: 4273445 (1981-06-01), Thompson et al.
patent: 4279464 (1981-07-01), Colombini
patent: 4327962 (1982-05-01), Redman
patent: 4523212 (1985-06-01), Hawrylo
patent: 4531809 (1985-07-01), Carter et al.
patent: 4608749 (1986-09-01), Harada et al.
patent: 4626878 (1986-12-01), Kuwano et al.
patent: 4640574 (1987-02-01), Unger
Suhara et al., "Monolithic Integrated Microratings and Photodiodes for Wavelength Multiplexing", Appl. Phys. Lett., vol. 40, No. 2, Jan. 15, 1982, pp. 120-122.
Heinen Jochen
Mahlein Hans F.
Marz Reinhard
Plihal Manfred
Schlotterer Heinrich
Gonzalez Frank
Siemens Aktiengesellschaft
Sikes William L.
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