Patent
1989-12-04
1991-02-05
James, Andrew J.
357 15, 357 16, 357 17, 357 19, 357 22, 357 49, 357 55, H01L 2714, H01L 3300, H01L 29161
Patent
active
049909908
DESCRIPTION:
BRIEF SUMMARY
The present invention is directed to a monolithically integrated waveguide-photodiode-FET combination for integration in optical communications systems including a carrier substrate of III-V semiconductor material, a photodiode layer of semiconductor material, a FET layer of semiconductor material, a first region of the photodiode doped for electrical conduction of a first conductivity type, a second region of the photodiode doped for electrical conduction of a second conductivity type, a source region, a channel region, a drain region, a gate region, a first contact on the second region of the photodiode, a second contact on the first region of the photodiode, a source contact on the source region, a drain contact on the drain region, and a gate contact on the gate region.
The development of optical data transmission systems is tending to utilize integrated opto-electronic circuits for the connection between optical and electronic components. The problem of monolithic integration of light waveguides, photodetectors and pre-amplifiers in one component arises at the receiver side. Good compatibility of the semiconductor layers and technologies required for the various components as well as a good coupling efficiency between waveguide and photodetector are demanded. Closed concepts for the integration of light waveguide, photo-detector and transistor are not known. Essentially three concepts have been previously proposed for the waveguide-photodiode combination.
The out-coupling of the radiation into the diode in the first of these concepts ensues on the basis of a suitable deflection of the beam direction into the photodiode. The realization of such an arrangement is described, for example in the publication by D. B. Ostrowsky et al, "Integrated Optical Photodetector", Appl. Phys. Lett. 22, 463-464 (1973). Formats of waveguide-photodiode combinations that deviate therefrom wherein the radiation is coupled out of the waveguide by deflection are disclosed in the Patent Applications EP 0 187 198 and EP 0 192 850.
A second possibility of radiation out-coupling is comprised in leakage wave coupling that, for example, is realized in the structure recited in the publication by C. Bornholdt et al., "Waveguide-integrated PIN photodiode InP", Electr. Lett. 23, 2-3 (1987).
The third concept provides butt coupling. One embodiment thereof may be found in the publication by G. E. Stillman et al, "Monolithic Integrated In.sub.x Ga.sub.1-x As Schottky-barrier Waveguide Photodetector", Appl. Phys. Lett. 25, 36-38 (1974).
A number of concepts for the integration of photodetector and field effect transistor have been published, these being described in the survey by 0. Wada, IEEE J. Quantum Electr. OE-22, 805-821 (1986). The reason for the various concepts for the integration of photodetector and field effect transistor lies in the different physical properties of these components, specifically in the different structure of the semiconductor layers in terms of geometry and doping. In order to nonetheless enable a planar chip structure, buried photodetector structures and/or FET structures have been proposed. Barrier layer field effect transistors (JFET), metal-semiconductor field effect transistors (MESFET) and metal-insulator-semiconductor field effect transistors (MISFET) thereby come into consideration as FET structures.
It is an object of the present invention to specify an optimally easily manufacturable layer structure for the monolithic integration of waveguide, photodetector and transistor in a common component part having high efficiency.
In an arrangement of the invention, this object is achieved by a monolithically integrated photodiode-FET combination in which a waveguide layer of semiconductor material is provided along with a photodiode layer and a FET layer which are grown positioned next to one another on a carrier substrate, the waveguide layer and the photodiode layer abutting one another. The waveguide layer, the photodiode layer and the FET layer are lightly doped for electrical conduction of a first condu
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Albrecht Helmut
Trommer Reiner
James Andrew J.
Ngo Ngan Van
Siemens Aktiengesellschaft
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