Monolithically integrated waveguide-photodiode combination

Details Monolithically integrated waveguide-photodiode combination Monolithically integrated waveguide-photodiode combination

1988-02-03

1989-05-30

Sikes, William L.

Wave transmission lines and networks

Automatically controlled systems

With control of equalizer and/or delay network

357 19, 357 16, 357 20, 333248, H01L 2714

Patent

active

048355755

ABSTRACT:
A monolithically integrated waveguide-photodiode combination for optical communications systems includes a carrier substrate of n-conductive semiconductor material, a further layer of the same material in whose surface is formed a strip-shaped n-conductive absorption layer, and of a waveguide formed thereon. A p-doping is diffused into the waveguide through the n-conductive absorption layer and a photodiode is thereby formed. A contact for the positive electrode of the photodiode is applied over the p-conductive region and the contact for the negative electrode is applied to the free side of the carrier substrate. The waveguide is covered by a cover layer along its top surface.

REFERENCES:
patent: 3969014 (1976-06-01), Auracher
patent: 4740819 (1988-04-01), Ouchi et al.
Ostrowsky et al., "Integrated Optical Photodetector," Appl. Phys. Lett., vol. 22, No. 9, May 1, 1973, pp. 463-464.
Stillman et al., "Monolithic Integrated inGaAs Schottky-Barrier Waveguide Photodetector," Applied Physics Letters, vol. 25, No. 1, Jul. 1, 1974, pp. 36-38.
Publication by G. E. Stillman, entitled "Monolithic Integrated In.sub.x GA.sub.1-x As Schottky-Barrier Waveguide Photodetector", Applied Physics Letters, vol. 25, No. 1, Jul. 1974, pp. 36-38.
Publication by D. B. Ostrowsky et al. entitled "Integrated Optical Photodetector", Appl. Phys. Lett., vol. 22, No. 9., May 1973, pp. 463, 464.

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