Monolithically integrated temperature sensor for power semicondu

Details Monolithically integrated temperature sensor for power semicondu Monolithically integrated temperature sensor for power semicondu

1992-11-06

1994-04-19

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257341, 257401, 257467, H01L 2358, H01L 2966

Patent

active

053048377

ABSTRACT:
A temperature sensor is monolithically integrated in a semiconductor body together with a vertical power semiconductor structure. The power semiconductor structure is formed of a plurality of power cells. The temperature sensor is formed of two sensor cells that can be manufactured simultaneously with the power cells. The advantage of the invention is that a highly sensitive temperature sensor can be manufactured in process-compatible fashion together with a vertical power semiconductor structure without additional steps and in a cost-beneficial way.

REFERENCES:
patent: 4760434 (1988-07-01), Tsuzuki et al.
patent: 5063307 (1991-11-01), Zommer

Affiliated with

Also associated with

Rating

Monolithically integrated temperature sensor for power semicondu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Monolithically integrated temperature sensor for power semicondu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithically integrated temperature sensor for power semicondu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-21827