Monolithically integrated semiconductor power device

Details Monolithically integrated semiconductor power device Monolithically integrated semiconductor power device

1985-09-17

1987-02-03

Wojciechowicz, Edward J.

357 48, H01L 2702

Patent

active

046411712

ABSTRACT:
A monolithic semiconductor device including an integrated control circuit and a pair of power transistors in a Darlington configuration integrated in the same chip solves the problem of ON-OFF switching which is prevented by the presence of parasitic transistors within the structure, these transistors preventing the correct operation of the device at saturation. The solution involves a suitable arrangement of the components in the chip, with the output transistor of the Darlington pair disposed in an intermediate position between the drive transistor of the pair and the integrated control circuit. The addition of semiconductor shields, disposed between the output transistor of the Darlington pair and the integrated control circuit further reduces the damaging effects of the parasitic transistors.

REFERENCES:
patent: 4370179 (1983-01-01), Roger

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