Monolithically integrated semiconductor circuit

Details Monolithically integrated semiconductor circuit Monolithically integrated semiconductor circuit

1987-10-27

1989-03-21

James, Andrew J.

Registers

Coded record sensors

Particular sensor structure

357 84, 357 41, 357 2313, 235488, 235492, H01L 2302, H01L 2504, H01L 2978, G06K 1906

Patent

active

048148490

ABSTRACT:
A monolithically integrated semiconductor circuit assembly includes a silicon substrate, an active layer with active electrical structures in a semiconductor circuit disposed on the silicon substrate, a passivating layer disposed on the active layer, at least one electrically conducting protective layer disposed on the passivating layer at least above the active electrical structures, and a casing disposed above the protective layer.

REFERENCES:
patent: 3518494 (1970-06-01), James
patent: 4434361 (1984-02-01), Meinguss et al.

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