Monolithically integrated resistive structure with power...

Details Monolithically integrated resistive structure with power... Monolithically integrated resistive structure with power...

2006-10-24

2006-10-24

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S140000, C257S565000, C257S566000

Reexamination Certificate

active

07126167

ABSTRACT:
A device integrated in a semiconductor substrate of a first type of conductivity being crowned by a semiconductor layer of a second type of conductivity comprising a voltage controlled resistive structure and an IGBT device, wherein the resistive structure comprises at least one substantially annular region of the first type of conductivity which surrounds a portion of the semiconductor layer.

REFERENCES:
patent: 6137124 (2000-10-01), Michel et al.
patent: 6190970 (2001-02-01), Liao et al.
patent: 6727526 (2004-04-01), Niedernostheide et al.
patent: 6847058 (2005-01-01), Ishizaka et al.
patent: 6936866 (2005-08-01), Deboy et al.
patent: 2004/0070050 (2004-04-01), Chi

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