Monolithically integrated power amplifier device

Amplifiers – With semiconductor amplifying device – Including particular power supply circuitry

Reexamination Certificate

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Details

C330S300000, C330S311000

Reexamination Certificate

active

07098741

ABSTRACT:
A monolithically integrated microwave amplifier device, comprises an input for receiving a microwave signal, a first power amplifier stage (11; 32) having an input coupled to receive the microwave signal, an impedance matching network (16; 39) coupled to an output of the first power amplifier stage, a second power amplifier stage (12; 33) having an input coupled to the impedance matching network, and an output for outputting the microwave signal after having been amplified by the first and second power amplifier stages, wherein the first power amplifier stage is optimized to be supplied with a first supply voltage (13; 35), which is essentially lower than a second supply voltage (14; 36), with which the second power amplifier stage is optimized to be supplied. Preferably, the second stage is an end stage based on an LDMOS transistor, and the first stage is a driver stage based on a bipolar transistor.

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Bengtsson, Olof et al.; “Small-Signal and Power Evaluation of Novel BiCMOS-Compatible Short-Channel LDMOS Technology”; IEEE Transactions on Microwave Theory and Techniques, vol. 51, No. 3, Mar. 2003.
Bouisse, Gerard; “Latest Advances in High Power SI MMIC”, IEEE Eumw, GaAs Symposium, Sep. 24-28, 2001, London, 2 Pages (front and back), Sep. 2001.
Bouisse, Gerard; “0.2 dB Gain Ripple—20W—WCDMA Silicon MMIC”, IEEE EuMC-ECWT Symposium 2001 (month unknown), 2 pages, 2001.

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