Monolithically integrated distributed Bragg reflector laser

Details Monolithically integrated distributed Bragg reflector laser Monolithically integrated distributed Bragg reflector laser

1982-02-22

1984-08-07

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

350 9611, 357 17, H01S 319

Patent

active

044647620

ABSTRACT:
In a heterostructure distributed Bragg reflector laser, at least one multilayer waveguide substantially comprised of a silicon dielectric compound is monolithically integrated with an active semiconductor heterostructure medium. Bragg reflectors are properly disposed within the waveguide.

REFERENCES:
patent: 3760292 (1973-09-01), Kogelnik et al.
patent: 3884549 (1975-05-01), Wang et al.
patent: 3970959 (1976-07-01), Wang et al.
patent: 4144503 (1979-03-01), Itoh et al.
patent: 4286838 (1981-09-01), Huignard et al.
Abe et al., "GaInAsP/InP Integrated Laser with Butt-Jointed Built-In Distributed-Bragg-Reflection Waveguide", Electronics Lett., vol. 17, No. 25, Dec. 10, 1981, pp. 945-947.
S. Wang, "Principles of Distributed Feedback and Distributed Bragg-Reflector Lasers," IEEE J. Of Quant. Elect., QE-10, pp. 413-427 (1974).
K. Utaka et al., "1.5-1.6 .mu.m GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors," Elec. Lett., 16, pp. 455-456 (1980).

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