Monolithically integrated circuits having dielectrically isolate

Details Monolithically integrated circuits having dielectrically isolate Monolithically integrated circuits having dielectrically isolate

1996-09-24

1997-11-04

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 47, 372 48, 257 84, 257 93, 257103, H01S 319, H01L 2715

Patent

active

056848196

ABSTRACT:
A fabrication technique for improved dielectric isolation of adjacent, electronic devices or electrically controllable optical devices provides an inter-device resistance in excess of 1 M.OMEGA.. Strips of a silicon oxide material, such as SiO.sub.2, are formed between the devices after device formation but prior to regrowth of an electrically conductive cap layer and subsequent metallization. The presence of the SiO.sub.2 strips prevents regrowth of the cap layer between the adjacent devices.

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