Monolithically integrated circuit of high dielectric strength fo

Details Monolithically integrated circuit of high dielectric strength fo Monolithically integrated circuit of high dielectric strength fo

1979-09-14

1982-07-13

Gellner, Michael L.

Electrical transmission or interconnection systems

Miscellaneous systems

357 49, 333 24C, H01L 2712

Patent

active

043396682

ABSTRACT:
A system is disclosed for coupling electrically isolated circuits in a monolithic integrated circuit. A signal coupler is integrated on a chip together with a primary circuit and a secondary circuit which is to be coupled to the primary circuit. The signal coupler comprises an integrated coupling capacitor which consists of a coplanar conductor path arrangement embedded into a passivation layer, the passivation layer being applied to an insulating substrate, preferably sapphire.

REFERENCES:
patent: 3519901 (1970-07-01), Bean et al.
patent: 4125818 (1978-11-01), Haken et al.
"Single-Transistor Cell makes room for more memory on an MOS Chip", Cohen et al.
"Kapazitiver Triac-Koppler", Elektor Jul./Aug. 1976, (Article 31).
"Halbleiterbauelemente fur die Elektronik", Siemens.
"Silicon-on-Sapphire substrates overcome MOS Limitations", A. Rapp et al.
"Capacitors of Coplanar Microstrip Lines in Integrated Circuits", H. Fritzche, 1976.

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