Monolithically integratable transistor circuit for limiting tran

Details Monolithically integratable transistor circuit for limiting tran Monolithically integratable transistor circuit for limiting tran

1990-03-15

1991-08-20

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 2311, 357 34, 357 51, 307542, 361 91, H01L 2702

Patent

active

050418890

ABSTRACT:
A monolithically integratable transistor circuit for limiting transient positive high voltages on an electric conductor includes a pnp transistor being conductive only upon exceeding a predetermined potential threshold value being positive as compared with a reference potential. The pnp transistor has an emitter terminal connected to an electric conductor, a collector terminal connected to the reference potential, and a base terminal. A parallel circuit is connected between the base terminal and the electric conductor. The parallel circuit has a high-impedance resistor and a first capacitor. A second capacitor is connected between the base terminal and the reference potential.

REFERENCES:
patent: 3270289 (1966-08-01), Citrin
patent: 4271445 (1981-06-01), Hartman et al.
patent: 4302792 (1981-01-01), Harwood
patent: 4631567 (1986-12-01), Kokado et al.
IBM Technical Disclosure Bulletin 30 (1988) Jan., No. 8, NY, U.S.A., vol. 30 "Cascaded Electrostatic Discharge Protection Structure", pp. 389, 390.

Affiliated with

Also associated with

Rating

Monolithically integratable transistor circuit for limiting tran does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Monolithically integratable transistor circuit for limiting tran, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Monolithically integratable transistor circuit for limiting tran will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1011737