Monolithically integratable microwave attenuation element

Details Monolithically integratable microwave attenuation element Monolithically integratable microwave attenuation element

1989-09-15

1991-02-26

Gensler, Paul

Wave transmission lines and networks

Attenuators

307568, 333 32, H03H 1128

Patent

active

049965042

ABSTRACT:
In a monolithically integratable microwave attenuation element, the attenuation is switchable between various, discrete values and the signal experiences only a small phase shift when switched between the individual attenuation values. The drain-source paths of field effect transistors (Q1, Q2, Q3) in the attenuation element are arranged in a PI configuration. Resistors (R11, R22, R33) are connected parallel to the drain-source paths of the field effect transistors (Q1, Q2, Q3) that are arranged in PI configuration.

REFERENCES:
patent: 3213299 (1965-10-01), Rogers
patent: 3748495 (1973-07-01), Messinger
patent: 4875023 (1989-10-01), Maoz
"GaAs Monolithic Wideband (2-18 GHz) Variable Attenuators", by Y. Tajima et al, 1982 IEEE MTT-S International Microwave Symposium Digest, Dallas TX, Jun. 15-17, 1982, pp. 479-481.
"Performance of Dual-Gate GaAs MESFET's as Gain-Controlled Low-Noise Amplifiers & High-Speed Modulators", by C. A. Liechti, IEEE Transactions on Microwave Theory & Techniques, vol. MTT 23, No. 6, Jun. 1975, pp. 461-469.
"Microwave Switching With GaAs FETs", by Y. Ayasli, MICROWAVE JOURNAL, Nov. 1982, pp. 61-74.
"A Low Phase Shift Step Attenuator Using p-i-n Diodes Switches", by F. G. Ananasso, IEEE Transactions On Microwave Theory and Techniques, vol. MTT 28, No. 7, Jul. 1980, pp. 774-776.

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