Monolithically integrable semiconductor circuit

Details Monolithically integrable semiconductor circuit Monolithically integrable semiconductor circuit

1980-11-19

1983-05-03

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307255, 307300, 357 44, 330298, H03K 333, H03K 3353, H01L 2702

Patent

active

043821952

ABSTRACT:
Monolithically integrable semiconductor circuit, including at least one npn-transistor and at least one pnp-transistor, contacts for voltage supply, at least one of a signal input and output, and means connecting at least one of the transistors in the form of a transistor to be protected to another of the transistors being of the complementary type to the at least one transistor to be protected for causing the other transistor without being connected as a diode to react to a minimum value of current controlling the at least one transistor to be protected and then due to its protection function to prevent the at least one transistor to be protected from being overdriven, the at least one transistor to be protected being in the form of a power transistor.

REFERENCES:
patent: 3482111 (1969-12-01), Gunderson et al.
patent: 3845405 (1974-10-01), Leidich
patent: 4021687 (1977-05-01), Yoshimura

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