Monolithic x-ray image detector and method of manufacturing

Details Monolithic x-ray image detector and method of manufacturing Monolithic x-ray image detector and method of manufacturing

1995-06-27

1998-08-25

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257444, 257448, 257459, 257724, 257788, H01L 31075, H01L 31105, H01L 31117

Patent

active

057985588

ABSTRACT:
An x-ray imaging detector comprised of read-out electronics and PIN diodes formed on a high resistivity silicon-on-insulator substrate that permits cell pitches as small as 20 microns. The read-out electronics are fabricated in the thin, top silicon layer of the SOI substrate. The read-out electronics produced provide circuits such as integrators and transimpedance amplifiers which are required to transform the electrical current from PIN diode detectors into an analog voltage. The anodes of the PIN sensor diodes are formed by etching through an oxide barrier layer in the substrate and implanting a heavily doped p+ region into a high resistivity intrinsic silicon layer. X-ray imaging detectors produced by the methods disclosed herein can be assembled into multi-chip modules that can be used in a large panel x-ray imaging apparatus. With a suitable printed circuit board and an edge connector, these panels, using the x-ray image detectors of the present invention, can provide a form, fit and function replacement of film cassettes in existing x-ray equipment.

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patent: 5391922 (1995-02-01), Matsui
patent: 5543660 (1996-08-01), Dombroski
patent: 5554821 (1996-09-01), Patterson et al.

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