Monolithic white light emitting device

Details Monolithic white light emitting device Monolithic white light emitting device

2006-08-29

2006-08-29

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S086000, C257SE33023

Reexamination Certificate

active

07098482

ABSTRACT:
A monolithic white light emitting device is provided. An active layer in the monolithic white light emitting device is doped with silicon or rare earth metal that forms a sub-band. The number of active layers included in the monolithic white light emitting device is one or two. When two active layers are included in the monolithic white light emitting device, a cladding layer is interposed between the two active layers. According to this light emission structure, white light can be emitted by a semiconductor, so a phosphor is not necessary. The monolithic white light emitting device is easily manufactured at a low cost and applied to a wide range of fields compared with a conventional white light emitting device that needs a help of a phosphor.

REFERENCES:
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5834331 (1998-11-01), Razeghi
patent: 6459100 (2002-10-01), Doverspike et al.

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