Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-07-31
1998-06-02
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257184, 257432, 257437, H01L 2906
Patent
active
057604193
ABSTRACT:
A compact and cost-effective wavelength meter and photodetector (10) that can measure simultaneously both wavelength and intensity has two back-to-back photodiodes (12 and 14) with a wavelength dependent distributed Bragg reflector (DBR) (28) positioned in-between. The wavelength resolution of this device is 1 nm or less. Easy design and fabrication of the device provides for reliable and cost-effective manufacturing. Applications include instrumentation and wavelength-division-multiplexing (WDM) in optical communication systems.
REFERENCES:
patent: 5227648 (1993-07-01), Woo
Chang-Hasnain Constance J.
Eng Lars E.
Lau Kam-Yin
Nabiev Rashit F.
The Board of Trustees of the Leland Stanford Junior University
The Regents of the University of California
Tran Minh-Loan
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