Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-03-29
2011-03-29
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S200000, C257S201000, C257SE27027
Reexamination Certificate
active
07915645
ABSTRACT:
According to one disclosed embodiment, a monolithic vertically integrated composite device comprises a double sided semiconductor substrate having first and second sides, a group IV semiconductor layer formed over the first side and comprising at least one group IV semiconductor device, and a group III-V semiconductor body formed over the second side and comprising at least one group III-V semiconductor device electrically coupled to the at least one group IV semiconductor device. The composite device may further comprise a substrate via and/or a through-wafer via providing electric coupling. In one embodiment, the group IV semiconductor layer may comprise an epitaxial silicon layer, and the at least one group IV semiconductor device may be a combined FET and Schottky diode (FETKY) fabricated on the epitaxial silicon layer. In one embodiment, the at least one group III-V semiconductor device may be a III-nitride high electron mobility transistor (HEMT).
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U.S. Appl. No. 61/113,142, filed Nov. 10, 2008, Zhang.
Farjami & Farjami LLP
International Rectifier Corporation
Soward Ida M
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